Temperature dependences of current density-voltage and capacitance-frequency characteristics of hydrogenated nancrystalline cubic SiC/crystalline Si heterojunction diodes
Thin Solid Films, Vol. 619 (Oct. 2016) pp. 323 -327
A. Tabata

Current density-voltage and admittance characteristics of hydrogenated nanocrystalline cubic SiC/crystalline Si heterojunction diodes prepared with varying H₂ gas flow rates,
Solie-State Electronics, Vol. 104 (Feb. 2015) pp. 33-36,
A. Tabata, Y. Imori.

N₂ post-deposition treatment on silicon thin films with a hot-wire chemical vapor method at a low wire-temperature,
Thin Solid Films, Vol. 519, Issue 14 (2011) pp. 4535–4537,
Y. Omori, A. Tabata, A. Kondo.

Structural changes in tungsten wire and their effect on the properties of hydrogenated nanocrystalline silicon carbide thin films,
Thin Solid Films, Vol. 519, Issue 14 (2011) pp. 4451–4454,
A. Tabata, A. Naito.

Highly-conductive nitrogen-doped hydrogenated nanocrystalline cubic silicon carbide thin films prepared by hot-wire chemical vapor deposition,
Materials Science and Engineering B, Vol. 175, Issues 3 (2010) pp. 201-206,
A. Tabata, Y. Hoshide, A. Kondo.

Influence of hydrogen addition and gas pressure on silicon nitride layer formation on microcrystalline silicon thin films by a hot-wire chemical vapor method using nitrogen gas,
Surf. Coat. Technol., Vol. 204, Issues 16-17 (2010) pp. 2559- 2563,
A. Tabata, K. Mazaki, A. Kondo.

Film-thickness dependence of structural and electrical properties of boron-doped hydrogenated microcrystalline silicon prepared by radiofrequency magnetron sputtering,
J. Non-Cryst. Solids. Vol. 356, Issues 23-24 (2010) pp. 1131-1134,
A. Tabata, J. Nakano, K. Mazaki, K. Fukaya.

Enhancement of Crystal Growth in Si Thin Film Deposition by H-Radical-Assisted Magnetron Sputtering,
Jpn. J. Appl. Phys. Vol. 49, No. 1 (2010) pp. 0515501-1 - 0515501-5, .
K. Fukaya, A. Tabata, K. Sasaki.

Formation of silicon nitride layer on microcrystalline silicon thin films by hot-wire chemical vapor method using nitrogen and hydrogen gases,
ECS Transaction, 25 (8) (2009) 339-342,
A. Tabata, K. Mazaki, A. Kondo.

Influences of N₂ and H₂ gas flow rates on properties of n-type nanocrystalline 3C-SiC:H thin films prepared by hot-wire chemical vapor deposition
ECS Transaction, 25 (8), (2009) 207-212.
A. Tabata, Y. Hoshide, A. Kondo.

N₂ decomposition by hot wire and N₂ post-deposition treatment on hydrogenated microcrystalline silicon thin films,
Thin Solids Films, 517 (2009) 3452-3455,
K. Mazaki A. Tabata, A. Kitagawa, A. Kondo.

Growth of silicon carbide thin films by hot-wire chemical vapor deposition form SiH₄/CH₄/H₂,
Thin Solids Films, 517 (2009) 3516-3519,
A. Tabata, Y. Komura, T. Narita, A. Kondo.

Preparation of n-type nanocrystalline 3C-SiC films by hot-wire CVD using N₂ as doping gas,
Thin Solids Films, 517 (2009) 3524-3527,
Y. Hoshide, A. Tabata, A. Kitagawa A. Kondo.

Importance of H₂ gas for growth of hot-wire CVD nanocrystalline 3C-SiC from SiH₄/CH₄/H₂,
Thin Solids Films, 517 (2009) 3520-3523,
Y. Hoshide, Y. Komura A. Tabata, A. Kitagawa A. Kondo.

Mechanism of hydrogenated microcrystalline Si film deposition by magnetron sputtering employing a Si target and H₂/Ar gas mixture,
Jpn. J. Appl. Phys., 48 (2009) 035507,
K. Fukaya, A. Tabata, K. Sakaki.

Influence of ion bombardment on microcrystalline silicon growth during radio-frequency magnetron sputtering,
Vacuum, 82 (2008) 777-781,
A. Tabat, K. Fukaya, T. Mizutani.

Properties of nanocrystalline cubic silicon carbide thin films prepared by hot-wire chemical vapor depocition using at various substrate temperature,
Jpn. J. Appl. Phys., 47 (2008) 561-565,
A. Tabata, Y. Komura, Y. Hoshide, T. Narita, A. Kondo.

Influence of gas pressure on low-temperature preparation and film properties of nanocrystalline 3C-SiC thin films by HW-CVD using SiH₄/CH₄/H₂ system
Thin Solid Films, 516 (2008) 633-636
Y. Komura, A. Tabata.

Structural Changes of Hot-Wire CVD Silicon Carbide Thin Films Induced by Gas Flow Rates,
Thin Solid Films, 516 (2008) 626-629,
A. Tabata, M. Mori.

Preparation of nanocrystalline silicon carbide thin films by hot-wire CVD at various filament-to-substrate distances,
Surf. Coat. Technol., 201 (2007) 8986-8990,
A. Tabata, Y. Komura.

Film properties of nanocrystalline 3C-SiC thin films deposited on glass substrate by hot-wire chemical vapor deposition using CH₄ as a carbon source,
Jpn. J. Appl. Phys., 46 (2007) 45-50, Y. Komura,
A. Tabata, T. Narita, M. Kanaya, A. Kondo, T. Mizutani.

Effect of hot-wire passivation on film properties of hydrogenated microcrystalline silicon films,
J. Non-Cryst. Solids, 352 (2006) 2943-2946,
S. Mitsuhashi, A. Tabata, T. Mizutani.

Nanocrystalline cubic silicon carbide prepared by hot-wire chemical vapor deposition using SiH₄/CH₄/H₂ at a low substrate temperature,
J. Non-Cryst. Solids, 352 (2006) 1367-1370,
Y. Komura, A. Tabat, T. Narita, A. Kondo, T. Mizutani.

Properties of hydrogenated amorphous silicon carbide films prepared at various hydrogen gas flow rates by hot-wire chemical vapor deposition,
Thin Solid Film, 501 (2006) 177-180,
M. Mori, A. Tabata, T. Mizutani.

Structure of amorphous and microcrystalline silicon thin films prepared at various gas pressures and gas flow rates by hot-wire chemical vapor deposition, Thin Solid Films, 501 (2006) 102-106, T. Daimaru, A. Tabata, T. Mizutani.

Control of crystallinity and deposition rate of hydrogenated silicon thin films prepared by radio frequency magnetron sputtering using layer-by layer growth,
Thin Solid Film491 (2005) 148-152,
A. Tabata, K. Okada, T. Mizutani, Y. Suzuoki.

Influence of target direct current bias voltage on the film structure of hydrogenated microcrystalline silicon prepared by direct-current- radiofrequency coupled magnetron sputtering,
Thin Solid Films, 478 (2005) 132-136,
K. Fukaya, A. Tabata, T. Mizutani.

Band-gap control of hydrogenated amorphous silicon carbide films prepared by hot-wire chemical vapor deposition,
J. Non-Cryst. Solids, 338-340 (2004) 521-524,
A. Tabata, M. Kuroda, M. Mori, T. Mizutani, Y. Suzuoki.

Dependence on gas pressure of mc-Si:H prepared by RF magnetron sputtering,
Vacuum, 74 (2004) 561-565,
K. Fukaya, A. Tabata, T. Mizutani.

Preparation of wide-gap hydrogenated amorphous silicon carbide thin films by hot-wire chemical vapor deposition at a low tungsten temperature,
Jpn. J. Appl. Phys., 42 (2003) L10-L12,
A. Tabata, T. Nakajima, T. Mizutani, Y. Suzuoki

Dependence on substrate temperature of the film structure of mc-Si:H prepared by RF magnetron sputtering,
Vacuum, 66 (2002) 409-413,
J. Kondo, A. Tabata, T. Kawamura, T. Mizutani

Effect of Plasma Off Time on Structure and Electrical Properties of Hydrogenated Amorphous Silicon Carbide Films, Jpn. J. Appl. Phys., 40 (2001) 6728 - 6731, A. Tabata, M. Sekito, Y. Suzuoki, T. Mizutani.

Effect of the hydrogen partial pressure ratio on the properties of mc-Si:H films prepared by rf magnetron sputtering,
Vacuum, 59 (2000) 785-791,
H. Makihara, A. Tabata, Y. Suzuoki, T. Mizutani.